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Detailed Information
Novel 50nm MOSFETs with side-gates for virtual sourcedrain extension : 전기적으로 여기된 전자층을 sourcedrain extension영역으로 이용하는 50 nm MOSFET에 대한 연구
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- Authors
- Advisor
- 박병국
- Issue Date
- 2003
- Publisher
- 서울대학교 대학원
- Keywords
- 50nm MOSFET ; Source drain junction ; 소스 드레인 접합 ; Inversion layer ; 전자층 ; Side-gate ; 사이드 게이트(side-gate) ; Short channel effect(sce) ; 단채널 효과(SCE) ; 3-input NAND
- Description
- Thesis (doctoral)--서울대학교 대학원 :전기·컴퓨터공학부,2003.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000058530
https://hdl.handle.net/10371/45888
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