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Vertical-AND (V-AND) array for high density, high speed, and reliable flash memories : 높은 집적도 및 빠른 속도, 높은 신뢰성을 갖는 수직형 앤드플래시 어레이

DC Field Value Language
dc.contributor.advisor박병국-
dc.contributor.author박일한-
dc.date.accessioned2010-01-29T06:08:39Z-
dc.date.available2010-01-29T06:08:39Z-
dc.date.copyright2009.-
dc.date.issued2009-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038193eng
dc.identifier.urihttps://hdl.handle.net/10371/46842-
dc.descriptionThesis(doctors) --서울대학교 대학원 :전기· 컴퓨터공학부,2009.8.en
dc.format.extentv, 92 leavesen
dc.language.isoen-
dc.publisher서울대학교 대학원en
dc.subject플래시 메모리en
dc.subjectVertical channelen
dc.subject낸드 어레이en
dc.subjectAND arrayen
dc.subject집적도en
dc.subjectflash memoryen
dc.subject수직 채널en
dc.subjectdouble-gateen
dc.subjectdepletion enhanced body isolation (DEBI)en
dc.subjectself-boostingen
dc.subjectprogram disturbanceen
dc.titleVertical-AND (V-AND) array for high density, high speed, and reliable flash memoriesen
dc.title.alternative높은 집적도 및 빠른 속도, 높은 신뢰성을 갖는 수직형 앤드플래시 어레이en
dc.typeThesis-
dc.contributor.department전기· 컴퓨터공학부-
dc.description.degreeDoctoren
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