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Schottky nanocontacts on ZnO nanorod arrays

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dc.contributor.authorPark, W. I.-
dc.contributor.authorYi, Gyu-Chul-
dc.contributor.authorKim, J.-W.-
dc.contributor.authorPark, S.-M.-
dc.date.accessioned2009-06-23-
dc.date.available2009-06-23-
dc.date.issued2003-01-16-
dc.identifier.citationAppl. Phys. Lett. 82, 4358 (2003)en
dc.identifier.issn0003-6951 (print)-
dc.identifier.issn1077-3118 (online)-
dc.identifier.urihttps://hdl.handle.net/10371/4832-
dc.identifier.urihttp://link.aip.org/link/?APPLAB/82/4358/1-
dc.description.abstractWe report on fabrication and electrical characteristics of ZnO nanorod Schottky diode arrays. High quality ZnO nanorods were grown for the fabrication of the Schottky diodes using noncatalytic metalorganic vapor phase epitaxy and Au was evaporated on the tips of the vertically well-aligned ZnO nanorods. I-V characteristics of both bare ZnO and Au/ZnO heterostructure nanorod arrays were measured using current-sensing atomic force microscopy. Although both nanorods exhibited nonlinear and asymmetric I-V characteristic curves, Au/ZnO heterostructure nanorods demonstrated much improved electrical characteristics: the reverse-bias breakdown voltage was improved from -3 to -8 V by capping a Au layer on the nanorod tips. The origin of the enhanced electrical characteristics for the heterostructure nanorods is suggested. (C) 2003 American Institute of Physics.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.subjectINDIUM-PHOSPHIDE NANOWIRESen
dc.subjectBUILDING-BLOCKSen
dc.subjectGROWTHen
dc.subjectDEVICESen
dc.subjectDIODESen
dc.titleSchottky nanocontacts on ZnO nanorod arraysen
dc.typeArticleen
dc.contributor.AlternativeAuthor이규철-
dc.identifier.doi10.1063/1.1584089-
dc.identifier.doi10.1063/1.1584089-
dc.citation.journaltitleApplied Physics Letters-
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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