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질소축적 측벽 산화막을 적용한 shallow trench isolation (STI)에 관한 연구

DC Field Value Language
dc.contributor.advisor박병국-
dc.contributor.author이명원-
dc.date.accessioned2010-02-02T07:09:27Z-
dc.date.available2010-02-02T07:09:27Z-
dc.date.copyright2003.-
dc.date.issued2003-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000059927kog
dc.identifier.urihttps://hdl.handle.net/10371/48356-
dc.description학위논문(석사)--서울대학교 대학원 :전기·컴퓨터공학부,2003.ko
dc.format.extentii, 66 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subjectshallow trench isolation (STI)ko
dc.subjectShallow trench isolation (sti)ko
dc.subjectmechanical stressko
dc.subjectMechanical stressko
dc.subjectnitrogen pile-up oxidationko
dc.subjectInitial o2 injection methodko
dc.subjectreverse junction leakageko
dc.subjectReverse junction leakageko
dc.subjecttemperatureko
dc.subjectTemperatureko
dc.subjectdeep level transient spectroscopy (DLTS)ko
dc.subjectDeep level transient spectroscopy (dlts)ko
dc.subjecthot carreir reliabilityko
dc.subjectHot carrier reliabilityko
dc.title질소축적 측벽 산화막을 적용한 shallow trench isolation (STI)에 관한 연구ko
dc.typeThesis-
dc.contributor.department전기·컴퓨터공학부-
dc.description.degreeMasterko
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