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Photoluminescent Properties of ZnO Thin Films Grown on SiO2(100)/Si by Metal-Organic Chemical Vapor Deposition
Cited 53 time in
Web of Science
Cited 63 time in Scopus
- Authors
- Issue Date
- 2001
- Publisher
- Springer Verlag
The Minerals, Metals & Materials Society (TMS)
Institute of Electrical and Electronics Engineers (IEEE)
- Citation
- Journal of Electronic Materials, 30, L32(2001)
- Keywords
- ZnO ; metal organic chemical vapor deposition (MOCVD) ; photoluminescence ; SiO2/Si substrate ; stimulated emission
- Abstract
- We report on the photoluminescent (PL) properties of ZnO thin films grown on SiO2/Si(100) substrates using low pressure metal-organic chemical vapor deposition. The growth temperature of the films was as low as 400 degreesC. From the PL spectra of the films at 10-300 K, strong PL peaks due to fi-ee and bound excitons were observed. The origin of the near bandedge emission peaks was investigated measuring temperature-dependent PL spectra. In addition, the ZnO films demonstrated a stimulated emission peak at room temperature. Upon illumination with an excitation density of 1 MW/cm(2), a strong, sharp peak was observed at 3.181 eV.
- ISSN
- 0361-5235
- Language
- English
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