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Effects of SiO2 Passivation on Electrical Characteristics of Power AlGaNGaN HEMT : 電力用 AlGaNGaN 높은 移動度 트랜지스터의 電氣的 特性에 관한 SiO2 패시베이션 效果
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- Authors
- Advisor
- 한민구
- Issue Date
- 2007
- Publisher
- 서울대학교 대학원
- Keywords
- GaN ; GaN ; AlGaN ; AlGaN ; 높은 전자 이동도 트랜지스터 ; high-electron-mobility transistor ; SiO2 ; SiO2 ; 패시베이션 ; passivation ; 레이저 ; laser
- Description
- 학위논문(박사) --서울대학교 대학원 :전기. 컴퓨터공학부,2007.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042991
https://hdl.handle.net/10371/48519
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