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Effects of SiO2 Passivation on Electrical Characteristics of Power AlGaNGaN HEMT
電力用 AlGaNGaN 높은 移動度 트랜지스터의 電氣的 特性에 관한 SiO2 패시베이션 效果

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Authors
하민우
Advisor
한민구
Issue Date
2007
Publisher
서울대학교 대학원
Keywords
GaNGaNAlGaNAlGaN높은 전자 이동도 트랜지스터high-electron-mobility transistorSiO2SiO2패시베이션passivation레이저laser
Description
학위논문(박사) --서울대학교 대학원 :전기. 컴퓨터공학부,2007.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042991

http://hdl.handle.net/10371/48519
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Ph.D. / Sc.D._전기·정보공학부)
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