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(A)Statistical method for reliability of tunneling oxide in the flash memory : Flash 메모리의 터널링 산화막 신뢰성 예측을 위한 통계적 방법

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dc.contributor.advisor박영준-
dc.contributor.author심병섭-
dc.date.accessioned2010-02-02T08:27:49Z-
dc.date.available2010-02-02T08:27:49Z-
dc.date.copyright2006.-
dc.date.issued2006-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000048781eng
dc.identifier.urihttps://hdl.handle.net/10371/48531-
dc.descriptionThesis(doctoral)--서울대학교 대학원 :전기. 컴퓨터공학부,2006.en
dc.format.extentxvi, 130 leavesen
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject신뢰성en
dc.subjectreliabilityen
dc.subject플래쉬메모리en
dc.subjectflash memoryen
dc.subjectretentionen
dc.subjectretentionen
dc.subjectstress induced leakage currenten
dc.subjectstress induced leakage currenten
dc.subject산화막 트랩en
dc.subjectoxide trapen
dc.subjectdispersive transporten
dc.subjectdispersive transporten
dc.subject공간분포en
dc.subjectspatial distributionen
dc.title(A)Statistical method for reliability of tunneling oxide in the flash memoryen
dc.title.alternativeFlash 메모리의 터널링 산화막 신뢰성 예측을 위한 통계적 방법en
dc.typeThesis-
dc.contributor.department전기. 컴퓨터공학부-
dc.description.degreeDoctoren
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