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Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods
Cited 1136 time in
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Cited 1200 time in Scopus
- Authors
- Issue Date
- 2002-01-03
- Publisher
- American Institute of Physics
- Citation
- Appl. Phys. Lett. 80, 4232 (2002)
- Keywords
- ULTRAVIOLET-LASER EMISSION ; ROOM-TEMPERATURE ; THIN-FILMS ; NANOWIRES ; NANOTUBES ; ARRAYS
- Abstract
- We report metalorganic vapor-phase epitaxial growth and structural and photoluminescent characteristics of ZnO nanorods. The nanorods were grown on Al2O3(00.1) substrates at 400 degreesC without employing any metal catalysts usually needed in other methods. Electron microscopy revealed that nanorods with uniform distributions in their diameters, lengths, and densities were grown vertically from the substrates. The mean diameter of the nanorods is as narrow as 25 nm. In addition, x-ray diffraction measurements clearly show that ZnO nanorods were grown epitaxially with homogeneous in-plane alignment as well as a c-axis orientation. More importantly, from photoluminescence spectra of the nanorods strong and narrow excitonic emission and extremely weak deep level emission were observed, indicating that the nanorods are of high optical quality. (C) 2002 American Institute of Physics.
- ISSN
- 0003-6951 (print)
1077-3118 (online)
- Language
- English
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