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Random laser action in ZnO nanorod arrays embedded in ZnO epilayers

Cited 190 time in Web of Science Cited 205 time in Scopus
Authors
Yu, S. F.; Yuen, Clement; Lau, S. P.; Park, Won Il; Yi, Gyu-Chul
Issue Date
2004-04-26
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 84, 3241 (2004)
Abstract
Random laser action with coherent feedback has been observed in ZnO nanorod arrays embedded in ZnO epilayers. The sample was fabricated by depositing a MgO buffer layer and followed by a layer of ZnO thin film onto a vertically well-aligned ZnO nanorod arrays grown on sapphire substrate. Under 355 nm optical excitation at room temperature, sharp lasing peaks emit at around 390 nm with a linewidth less than 0.4 nm has been observed in all directions. In addition, the dependence of the lasing threshold intensity on the excitation area is shown in good agreement with the random laser theory. Hence, it is demonstrated that random laser action can also be supported in ZnO nanorod arrays. (C) 2004 American Institute of Physics.
ISSN
0003-6951 (print)
1077-3118 (online)
Language
English
URI
http://hdl.handle.net/10371/4878

http://link.aip.org/link/?APPLAB/84/3241/1
DOI
https://doi.org/10.1063/1.1734681

https://doi.org/10.1063/1.1734681
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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