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Design and fabrication of planar type InGaAsInP avalanche photodiodes for 10 Gbps application : 10 Gbps 응용을 위한 평면형 InGaAsInP 애벌런치 광수신소자의 설계 및 제작
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김성준 | - |
| dc.contributor.author | 윤경훈 | - |
| dc.date.accessioned | 2010-02-02T16:08:05Z | - |
| dc.date.available | 2010-02-02T16:08:05Z | - |
| dc.date.copyright | 2005 | - |
| dc.date.issued | 2005 | - |
| dc.identifier.other | 000000050109 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000050109 | - |
| dc.description | Thesis(doctoral)--서울대학교 대학원 :전기공학부,2005. | - |
| dc.format.extent | iii, 129 leaves | - |
| dc.language.iso | en | - |
| dc.publisher | 서울대학교 대학원 | - |
| dc.subject | 애벌런치 수광소자 | - |
| dc.subject | Avalanche photodiode | - |
| dc.subject | 이온화 충돌 | - |
| dc.subject | Impact ionization | - |
| dc.subject | 광통신 | - |
| dc.subject | Optical communication | - |
| dc.subject | 이득-대역폭 | - |
| dc.subject | Gain-bandwidth product | - |
| dc.subject | 항복전압 | - |
| dc.subject | Breakdown voltage | - |
| dc.title | Design and fabrication of planar type InGaAsInP avalanche photodiodes for 10 Gbps application | - |
| dc.title.alternative | 10 Gbps 응용을 위한 평면형 InGaAsInP 애벌런치 광수신소자의 설계 및 제작 | - |
| dc.type | Thesis | - |
| dc.contributor.department | 전기공학부 | - |
| dc.description.degree | Thesis(doctoral)-- | - |
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