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Capacitorless 1-transistor dynamic random access memory (DRAM) Cell : 캐패시터를 갖지 않는 단일 트랜지스터 DRAM 쎌
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 박병국 | - |
dc.contributor.author | 정훈 | - |
dc.date.accessioned | 2010-02-02T16:08:30Z | - |
dc.date.available | 2010-02-02T16:08:30Z | - |
dc.date.copyright | 2007 | - |
dc.date.issued | 2007 | - |
dc.identifier.other | 000000045197 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000045197 | - |
dc.description | Thesis(doctor`s)--서울大學校 大學院 :電氣·컴퓨터工學部,2007. | - |
dc.format.extent | v, 99 leaves | - |
dc.language.iso | en | - |
dc.publisher | 서울大學校 大學院 | - |
dc.subject | DRAM | - |
dc.subject | DRAM (Dynamic Random Access Memory) | - |
dc.subject | 캐패시터 없는 DRAM 쎌 | - |
dc.subject | capacitorless DRAM cell | - |
dc.subject | 단일 트랜지스터 DRAM 쎌 | - |
dc.subject | one transistor DRAM cell | - |
dc.subject | 수직 채널 | - |
dc.subject | vertical channel | - |
dc.subject | 원통형 게이트 | - |
dc.subject | surrounding gate | - |
dc.subject | 고온전자 | - |
dc.subject | hot carrier | - |
dc.subject | 공통 소오스 구조 | - |
dc.subject | common source architecture | - |
dc.subject | SGVC | - |
dc.subject | SGVC | - |
dc.title | Capacitorless 1-transistor dynamic random access memory (DRAM) Cell | - |
dc.title.alternative | 캐패시터를 갖지 않는 단일 트랜지스터 DRAM 쎌 | - |
dc.type | Thesis | - |
dc.contributor.department | 電氣·컴퓨터工學部 | - |
dc.description.degree | Thesis(doctor`s)-- | - |
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