S-Space College of Natural Sciences (자연과학대학) Dept. of Physics and Astronomy (물리·천문학부) Physics (물리학전공) Journal Papers (저널논문_물리학전공)
Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN
- Park, Won Il; Yi, Gyu-Chul
- Issue Date
- John Wiley & Sons
- Adv. Mater. 2004, 16, 87
- Electrolurninescent (EL) devices (see Figure) have been fabricated using n-ZnO nanorod arrays grown on p-GaN epilayers. Simple heteroepitaxial growth yields vertically aligned ZnO nanorods with an abrupt interface on GaN. The p-n heterojunction EL device shows a high current density and strong electroluminescence even at a reverse-bias voltage of 3 V.
- 0935-9648 (print)
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