Publications
Detailed Information
Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN
Cited 714 time in
Web of Science
Cited 761 time in Scopus
- Authors
- Issue Date
- 2004-01-05
- Publisher
- John Wiley & Sons
- Citation
- Adv. Mater. 2004, 16, 87
- Keywords
- OPTOELECTRONIC DEVICES ; ROOM-TEMPERATURE ; BAND ; PHOTOLUMINESCENCE ; EMISSIONS
- Abstract
- Electrolurninescent (EL) devices (see Figure) have been fabricated using n-ZnO nanorod arrays grown on p-GaN epilayers. Simple heteroepitaxial growth yields vertically aligned ZnO nanorods with an abrupt interface on GaN. The p-n heterojunction EL device shows a high current density and strong electroluminescence even at a reverse-bias voltage of 3 V.
- ISSN
- 0935-9648 (print)
1521-4095 (online)
- Language
- English
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.