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ZnO Nanorod Logic Circuits
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Won Il | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.contributor.author | Kim, Jin Suk | - |
dc.contributor.author | Lee, Hu-jong | - |
dc.date.accessioned | 2009-06-23T08:52:37Z | - |
dc.date.available | 2009-06-23T08:52:37Z | - |
dc.date.issued | 2005-06-06 | - |
dc.identifier.citation | Adv. Mater. 2005, 17, 1393 | en |
dc.identifier.issn | 0935-9648 (print) | - |
dc.identifier.issn | 1521-4095 (online) | - |
dc.identifier.uri | https://hdl.handle.net/10371/4902 | - |
dc.description.abstract | Logic devices, including OR, AND, NOT, and NOR gates, based on single-crystalline ZnO nanorods are demonstrated (see Figure), In these devices, ZnO nanorods are employed as semiconducting channels. They control metal/oxide semiconductor junction characteristics, to yield either good ohmic or Schottky contacts, ensuring fabrication of high-performance Schottky diodes and metal-semiconductor field-effect transistors. | en |
dc.language.iso | en | en |
dc.publisher | John Wiley & Sons | en |
dc.subject | FIELD-EFFECT TRANSISTORS | en |
dc.subject | SCHOTTKY DIODES | en |
dc.subject | NANOWIRE | en |
dc.subject | SEMICONDUCTOR | en |
dc.subject | ARRAYS | en |
dc.subject | OXIDE | en |
dc.subject | FILM | en |
dc.subject | GAN | en |
dc.subject | NANOBELTS | en |
dc.subject | GATES | en |
dc.title | ZnO Nanorod Logic Circuits | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.contributor.AlternativeAuthor | 박원일 | - |
dc.contributor.AlternativeAuthor | 김진석 | - |
dc.contributor.AlternativeAuthor | 이후종 | - |
dc.identifier.doi | 10.1002/adma.200401732 | - |
dc.identifier.doi | 10.1002/adma.200401732 | - |
dc.citation.journaltitle | Advanced Materials | - |
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