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Low-resistance Ti/Al ohmic contact on undoped ZnO
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- Authors
- Issue Date
- 2002-05
- Publisher
- Springer Verlag
The Minerals, Metals & Materials Society (TMS)
Institute of Electrical and Electronics Engineers (IEEE)
- Citation
- Journal of Electronic Materials, 31, 868(2002)
- Keywords
- ZnO ; ohmic contact ; photoemission spectroscopy
- Abstract
- We report a low-resistance ohmic contact on undoped ZnO using a promising contact scheme of Ti/Al. Specific-contact resistivity, as low as 9.0 x 10(-7) Omegacm(2), was obtained from the Ti(300 Angstrom)/Al(3,000 Angstrom) contact annealed at 300degreesC. It was found that TiO was produced, and the atomic ratio of Zn/O was dramatically increased after annealing at 300degreesC. This provides the evidence that a number of oxygen vacancies, acting as donors for electrons, were produced below the contact. This leads to the increase of electron concentration via the reduction of contact resistivity.
- ISSN
- 0361-5235
- Language
- English
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