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열산화법으로 형성된 N₂O 게이트 산화막의 전기적 특성 및 MOSFET 응용 연구 : Electrical characterization of the furanace-grown N₂O gate oxide and its application for MOSFETs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김형준 | - |
| dc.contributor.author | 김선우 | - |
| dc.date.accessioned | 2010-02-05T06:40:50Z | - |
| dc.date.available | 2010-02-05T06:40:50Z | - |
| dc.date.copyright | 1996. | - |
| dc.date.issued | 1996 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000081613 | kog |
| dc.identifier.uri | https://hdl.handle.net/10371/50804 | - |
| dc.description | 학위논문(박사)--서울대학교 대학원 :무기재료공학과,1996. | ko |
| dc.format.extent | xii 162 p. | ko |
| dc.language.iso | ko | ko |
| dc.publisher | 서울대학교 대학원 | ko |
| dc.subject | 열산화막 | ko |
| dc.subject | thermal oxide | ko |
| dc.subject | 게이트 산화막 | ko |
| dc.subject | gate oxide | ko |
| dc.subject | 신뢰성 | ko |
| dc.subject | reliability | ko |
| dc.subject | 표면채널형 MOSFET | ko |
| dc.subject | surface-channel MOSFET | ko |
| dc.subject | MOS 커패시터 | ko |
| dc.subject | MOS capacitor | ko |
| dc.title | 열산화법으로 형성된 N₂O 게이트 산화막의 전기적 특성 및 MOSFET 응용 연구 | ko |
| dc.title.alternative | Electrical characterization of the furanace-grown N₂O gate oxide and its application for MOSFETs | ko |
| dc.type | Thesis | - |
| dc.contributor.department | 무기재료공학과 | - |
| dc.description.degree | Doctor | ko |
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