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LP-MOCVD에 의한 (001)InP 기판 위의 InAs 자발형성 양자점 성장

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author윤석호-
dc.date.accessioned2010-02-08T07:41:05Z-
dc.date.available2010-02-08T07:41:05Z-
dc.date.copyright1998.-
dc.date.issued1998-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000075750kog
dc.identifier.urihttps://hdl.handle.net/10371/52011-
dc.description학위논문(석사)--서울대학교 대학원 :무기재료공학과,1998.ko
dc.format.extentvii, 56 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.titleLP-MOCVD에 의한 (001)InP 기판 위의 InAs 자발형성 양자점 성장ko
dc.typeThesis-
dc.contributor.department무기재료공학과-
dc.description.degreeMasterko
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