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ICPCVD SiNx passivation을 이용한 GaAs metamorphic HEMT 소자의 DC 특성 개선에 관한 연구 : (A)study on the DC characteristics improvement of GaAs metamorphic HEMTs using ICPCVD SiNx passivation

DC Field Value Language
dc.contributor.advisor서광석-
dc.contributor.author김동환-
dc.date.accessioned2010-02-09-
dc.date.available2010-02-09-
dc.date.copyright2007.-
dc.date.issued2007-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000043858kog
dc.identifier.urihttps://hdl.handle.net/10371/52482-
dc.description학위논문(석사) --서울대학교 대학원 :전기. 컴퓨터공학부,2007.ko
dc.format.extent55 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subjectMetamorphic HEMTko
dc.subjectremote ICPCVDko
dc.subjectconformalko
dc.subjectDPLko
dc.subjectcutoff frequency(fT)ko
dc.subjectmaximum oscillation frequency(fmax)ko
dc.titleICPCVD SiNx passivation을 이용한 GaAs metamorphic HEMT 소자의 DC 특성 개선에 관한 연구ko
dc.title.alternative(A)study on the DC characteristics improvement of GaAs metamorphic HEMTs using ICPCVD SiNx passivationko
dc.typeThesis-
dc.contributor.department전기. 컴퓨터공학부-
dc.description.degreeMasterko
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