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NAND형 비휘발성 메모리의 쓰기지우기 특성 모델링 : Modeling of ProgramErase characteristics of NAND-type SONOS flash memory

DC Field Value Language
dc.contributor.advisor박병국-
dc.contributor.author김두현-
dc.date.accessioned2010-02-09T14:53:58Z-
dc.date.available2010-02-09T14:53:58Z-
dc.date.copyright2007.-
dc.date.issued2007-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000045771kog
dc.identifier.urihttps://hdl.handle.net/10371/53480-
dc.description학위논문(석사)--서울대학교 대학원 :전기공학부,2007.ko
dc.format.extentii, 50 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subject플래시 메모리ko
dc.subjectflash memoryko
dc.subject쓰기ko
dc.subjectprogramko
dc.subject지우기ko
dc.subjecteraseko
dc.subjectSONOSko
dc.subjectSONOSko
dc.subject모델ko
dc.subjectmodelko
dc.subject시뮬레이션ko
dc.subjectsimulationko
dc.titleNAND형 비휘발성 메모리의 쓰기지우기 특성 모델링ko
dc.title.alternativeModeling of ProgramErase characteristics of NAND-type SONOS flash memoryko
dc.typeThesis-
dc.contributor.department전기공학부-
dc.description.degreeMasterko
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