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(A)Study on gate resistance of RF MOSFETs

DC Field Value Language
dc.contributor.advisor신형철-
dc.contributor.author강명곤-
dc.date.accessioned2010-02-09T14:54:37Z-
dc.date.available2010-02-09T14:54:37Z-
dc.date.copyright2005.-
dc.date.issued2005-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000052888eng
dc.identifier.urihttps://hdl.handle.net/10371/53489-
dc.descriptionThesis(master`s)--서울대학교 대학원 :전기공학부,2005.en
dc.format.extentii, 42 leavesen
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subjectRF MOSFETen
dc.subjectRF MOSFETen
dc.subject게이트 저항en
dc.subjectGate Resistanceen
dc.subject모델링en
dc.subjectModelingen
dc.subject파라미터 추출en
dc.subjectParameter Extractionen
dc.subject폴리 저항en
dc.subjectElectrode Resistanceen
dc.subject채널 저항en
dc.subjectChannel Resistanceen
dc.title(A)Study on gate resistance of RF MOSFETsen
dc.typeThesis-
dc.contributor.department전기공학부-
dc.description.degreeMasteren
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