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Photoluminescent Properties of Se-doped GaN
Cited 1 time in
Web of Science
Cited 2 time in Scopus
- Authors
- Issue Date
- 2001-07-15
- Publisher
- Japan Society of Applied Physics
- Citation
- Jpn. J. Appl. Phys. 40 (2001) 4470
- Abstract
- The nature of Se donors in GaN was investigated using temperature dependent photoluminescence spectroscopy. Near-bandedge emission of the doped films was investigated at temperatures between 15-300 K. Based on the temperature dependence of the near-bandedge emission, the Se donor level in GaN was estimated to be 38 +/- 4 meV below the conduction band minimum.
- ISSN
- 0021-4922 (print)
1347-4065 (online)
- Language
- English
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