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Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO (0 < x < 0.47) thin films
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, W. I. | - |
| dc.contributor.author | Yi, Gyu-Chul | - |
| dc.contributor.author | Jang, H. M. | - |
| dc.date.accessioned | 2009-07-13 | - |
| dc.date.available | 2009-07-13 | - |
| dc.date.issued | 2001-09-24 | - |
| dc.identifier.citation | Appl. Phys. Lett. 79, 2022 (2001) | en |
| dc.identifier.issn | 0003-6951 (print) | - |
| dc.identifier.issn | 1077-3118 (online) | - |
| dc.identifier.uri | http://link.aip.org/link/?APPLAB/79/2022/1 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/5355 | - |
| dc.description.abstract | High-quality Zn1-xMgxO(0.00 less than or equal tox less than or equal to0.49) thin films were epitaxially grown at 500-650 degreesC on Al2O3(00.1) substrates using metalorganic vapor-phase epitaxy. By increasing the Mg content in the films up to 49 at. %, the c-axis constant of the films decreased from 5.21 to 5.14 Angstrom and no significant phase separation was observed as determined by x-ray diffraction measurements. Furthermore, the near-band-edge emission peak position showed blueshifts of 100, 440, and 685 meV at Mg content levels of 9, 29, and 49 at. %, respectively. Photoluminescent properties of the alloy films are also discussed. | en |
| dc.description.sponsorship | This research was sponsored by the KISTEP through the National Research Laboratory program, the Brain Korea 21 project, and the POSTECH BSRI Special Fund-2001. | en |
| dc.language.iso | en | - |
| dc.publisher | American Institute of Physics | en |
| dc.title | Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO (0 < x < 0.47) thin films | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 이규철 | - |
| dc.identifier.doi | 10.1063/1.1405811 | - |
| dc.identifier.doi | 10.1063/1.1405811 | - |
| dc.citation.journaltitle | Applied Physics Letters | - |
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