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Metal-ZnO Heterostructure Nanorods with an Abrupt Interface

Cited 19 time in Web of Science Cited 19 time in Scopus
Authors

Park, Won Il; Jung, Suk Woo; Yi, Gyu-Chul; Oh, Sang Ho; Park, Chan Gyung; Kim, Miyoung

Issue Date
2002-11-01
Publisher
Japan Society of Applied Physics
Citation
Jpn. J. Appl. Phys. 41 (2002) L1206
Keywords
ZnOnanorodsmetal-semiconductor heterostructuremetalorganic vapor phase epitaxy (MOVPE)non-catalytic growth
Abstract
We report on metal-semiconductor heterostructure nanorods with an abrupt interface. The metal-semiconductor nanorods were fabricated simply by evaporating metal on vertically aligned ZnO nanorods. Before the fabrication of heterostructure nanorods, the ZnO nanorods were prepared by metalorganic vapor phase epitaxy. Since no metal catalyst is employed during the nanorod growth, the nanorods do not exhibit any metal clusters on their tips. When metal is evaporated on the vertically aligned nanorods, metal is deposited mainly on the tips of the nanorods. Transmission electron microscopy revealed that the Au-coated ZnO heterostructure nanorods exhibit an atomically sharp interface between ZnO and Au.
ISSN
0021-4922 (print)
1347-4065 (online)
Language
English
URI
http://jjap.ipap.jp/link?JJAP/41/L1206/

https://hdl.handle.net/10371/5358
DOI
https://doi.org/10.1143/JJAP.41.L1206

https://doi.org/10.1143/JJAP.41.L1206
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