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Local structure around Ga in ultrafine GaN/ZnO coaxial nanorod heterostructures

DC Field Value Language
dc.contributor.authorHan, S.-W.-
dc.contributor.authorYoo, H.-J.-
dc.contributor.authorAn, Sung Jin-
dc.contributor.authorYoo, Jinkyoung-
dc.contributor.authorYi, Gyu-Chul-
dc.date.accessioned2009-07-13T06:18:22Z-
dc.date.available2009-07-13T06:18:22Z-
dc.date.issued2006-03-13-
dc.identifier.citationAppl. Phys. Lett. 88, 111910 (2006)en
dc.identifier.issn0003-6951 (print)-
dc.identifier.issn1077-3118 (online)-
dc.identifier.urihttp://link.aip.org/link/?APPLAB/88/111910/1-
dc.identifier.urihttps://hdl.handle.net/10371/5369-
dc.description.abstractThe structure of tubular GaN coaxially grown on ZnO nanorods with thickness of 6-12 nm was investigated using x-ray absorption fine structure (XAFS) at the Ga K edge. The XAFS measurements revealed that the GaN had a distorted-wurtzite structure, and that there were more distortions in the bond length of Ga-Ga pairs than in Ga-N pairs. However, no extra disorders were observed in any of the pairs. These results strongly suggest that Ga atoms first bonded to the ZnO template. Unlike other techniques, the XAFS determines structure around a selected species atom in nano-heterostructures.en
dc.description.sponsorshipWork at Chonbuk National University was conducted under the auspices of the Korean MOST through PEFP User Program as a part of the 21C Frontier R&D Program and the Korean MOCIE through the New Technology R&D Program. Work at POSTECH was supported by the National Creative Research Initiative Project of the MOST. The PNCCAT beamline was supported by the U.S. DOE.en
dc.language.isoen-
dc.publisherAmerican Institute of Physicsen
dc.titleLocal structure around Ga in ultrafine GaN/ZnO coaxial nanorod heterostructuresen
dc.typeArticleen
dc.contributor.AlternativeAuthor안성진-
dc.contributor.AlternativeAuthor유진경-
dc.contributor.AlternativeAuthor이규철-
dc.identifier.doi10.1063/1.2185627-
dc.identifier.doi10.1063/1.2185627-
dc.citation.journaltitleApplied Physics Letters-
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