Fabrication and photoluminescent characteristics of ZnO/Mg0.2Zn0.8O coaxial nanorod single quantum well structures

Abstract

The authors report on fabrication and photoluminescent (PL) properties of ZnO/Mg0.2Zn0.8O coaxial nanorod quantum structures with various quantum well and barrier layer thicknesses. Employing catalyst-free metal-organic vapor-phase epitaxy, coaxial nanorod single quantum well structures were fabricated by the alternate heteroepitaxial growth of ZnO and Mg0.2Zn0.8O layers over the entire surfaces of the ZnO nanorods with fine thickness controls of the layers. The quantum confinement effect of carriers in coaxial nanorod quantum structures depends on the Mg0.2Zn0.8O quantum barrier layer thickness as well as the thickness of the ZnO quantum well layer. The temperature-dependent PL characteristics of the coaxial nanorod quantum structures are also discussed.