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Enhanced field emission properties from well-aligned zinc oxide nanoneedles grown on the Au/Ti/n-Si substrate

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dc.contributor.authorPark, Chan Jun-
dc.contributor.authorChoi, Duck-Kyun-
dc.contributor.authorYoo, Jinkyoung-
dc.contributor.authorYi, Gyu-Chul-
dc.contributor.authorLee, Cheol Jin-
dc.date.accessioned2009-07-14T02:59:03Z-
dc.date.available2009-07-14T02:59:03Z-
dc.date.issued2007-02-22-
dc.identifier.citationAppl. Phys. Lett. 90, 083107 (2007)en
dc.identifier.issn0003-6951 (print)-
dc.identifier.issn1077-3118 (online)-
dc.identifier.urihttp://link.aip.org/link/?APPLAB/90/083107/1-
dc.identifier.urihttps://hdl.handle.net/10371/5409-
dc.description.abstractThe authors investigated the field emission from vertically well-aligned zinc oxide (ZnO) nanoneedles grown on the Au/Ti/n-Si (100) substrate using metal organic chemical vapor deposition. The turn-on field of ZnO nanoneedles was about 0.85 V/mu m at the current density of 0.1 mu A/cm(2), and the emission current density of 1 mA/cm(2) was achieved at the applied electric field of 5.0 V/mu m. The low turn-on field of the ZnO nanoneedles was attributed to very sharp tip morphology, and the high emission current density was mainly caused by the formation of the stable Ohmic contact between the ZnO nanoneedles and Au film.en
dc.description.sponsorshipThis work was supported by the SRC program of Center for Nanotubes and Nanosructured Composites of MOST/KOSEF, by the National R&D Project for Nano Science and Technology, and by the Ministry of Commerce, Industry, and Energy of Korea through a Components and Materials Technology Development project (No.0401-DD2-0162).en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.titleEnhanced field emission properties from well-aligned zinc oxide nanoneedles grown on the Au/Ti/n-Si substrateen
dc.typeArticleen
dc.contributor.AlternativeAuthor박찬준-
dc.contributor.AlternativeAuthor최덕균-
dc.contributor.AlternativeAuthor유진경-
dc.contributor.AlternativeAuthor이규철-
dc.contributor.AlternativeAuthor이철진-
dc.identifier.doi10.1063/1.2643979-
dc.citation.journaltitleApplied Physics Letters-
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