Electroreflectance Study of Zn0.8Mg0.2O/ZnO Nanorod Heterostructures

Abstract

ZnO, due to its large exciton binding energy which enables excitonic recombination at room temperature, is attracting much attention as a material for room-temperature UV devices. In particular, ZnO nanorod has attracted a great deal of attention because of the commercial interest in short-wavelength semiconductor laser diodes and nanometer-scale electronic devices. Zn0.8Mg0.2O/ZnO nanorod heterostructures were grown by metal-organic vapor-phase epitaxy on catalyst-free ZnO nanorods. Electro reflectance measurements were carried out at temperatures between 90 K and 295 K and compared with photoluminescence data. Quantum confinement effects in Zn0.8Mg0.2O/ZnO nanorod heterostructures were observed.