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ZnSe-Si bi-coaxial nanowire heterostructures
Cited 67 time in
Web of Science
Cited 73 time in Scopus
- Authors
- Issue Date
- 2005-08-29
- Publisher
- John Wiley & Sons
- Citation
- Adv. Funct. Mater. 2005, 15, 1471
- Keywords
- Heterostructures ; Nanowires, inorganic ; Silicon ; Zinc selenide
- Abstract
- We report on the fabrication, structural characterization, and luminescence properties od ZnSe/Si bi-coaxial nanowire hetero-structures. Uniform ZnSe/Si bi-coaxial nanowire heterostructures are grown on silicon substrate by simple one-step thermal evaporeation od ZnSe powder in the presence of hydrogen. Both ZnSe and silicon are single-crystalline in the bi-coaxial nanowire heterostructures, and there is a sharp interface along the nanowire axial direction. Furthermore, secondary nanostructures of either ZnSe nanobrushes od a SiOx sheath are also grown on the primary bi-coaxial nanowires are formed via a co-growth mechanism, that is, ZnSe terminates specific surfaces of silicon and leads to anisotropic, one-dimension silicon growth, which simultaneously serves as preferential nucleation sites for ZnSe, resulting in the bi-coaxial nanowire heterostructures. In addition, the optical properties od ZnSe/Si nanowires are investigated using low-temperature photoluminescence spectroscopy.
- ISSN
- 1616-301X (print)
1616-3028 (online)
- Language
- English
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