Enhanced Secondary Electron Emission from Group III Nitride/ZnO Coaxial Nanorod Heterostructures

Abstract

Needle work: AlN/ZnO and GaN/ZnO coaxial nanoneedle heterostructures (see TEM image) have a higher secondary electron emission (SEE) yield () than thin films of AlN and GaN deposited on Si substrates. The dependence of the SEE on the incidence angle of the beam indicates that these heterostructures do not follow the power law. The value of the heterostructures is enhanced by the inherited nanostructure from the ZnO nanoneedle template.