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Low-temperature (similar to 270 degrees C) growth of vertically aligned ZnO nanorods using photoinduced metal organic vapour phase epitaxy

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dc.contributor.authorYatsui, T-
dc.contributor.authorLim, J-
dc.contributor.authorNakamata, T-
dc.contributor.authorKitamura, K-
dc.contributor.authorOhtsu, M-
dc.contributor.authorYi, Gyu-Chul-
dc.date.accessioned2009-07-14T06:44:26Z-
dc.date.available2009-07-14T06:44:26Z-
dc.date.issued2007-02-14-
dc.identifier.citationNanotechnology 18 065606en
dc.identifier.issn0957-4484-
dc.identifier.urihttps://hdl.handle.net/10371/5467-
dc.description.abstractWe successfully produced a drastic decrease in the required growth temperature of single-crystalline ZnO nanorods, and enabled successful growth of vertically aligned ZnO nanorods on a Si(100) substrate using photoinduced metal organic vapour phase epitaxy (MOVPE). We introduced 325 nm light during the MOVPE growth, and achieved vertical growth of single-crystalline ZnO nanorods with a hexagonal crystal structure on Si(100) at a growth temperature of 270 degrees C. The successful low-temperature growth of ZnO nanorods on the Si(100) substrate described here is a promising step toward designing nanoscale photonic and electronic devices required by future systems.en
dc.description.sponsorshipThe work at POSTECH was supported by the National Creative Research Initiative Project, Korea and AOARD 05-84 (Quotation No. FA5209-05-T0369), United States.en
dc.language.isoenen
dc.publisherInstitute of Physicsen
dc.titleLow-temperature (similar to 270 degrees C) growth of vertically aligned ZnO nanorods using photoinduced metal organic vapour phase epitaxyen
dc.typeArticleen
dc.contributor.AlternativeAuthor이규철-
dc.identifier.doi10.1088/0957-4484/18/6/065606-
dc.identifier.doi10.1088/0957-4484/18/6/065606-
dc.citation.journaltitleNanotechnology-
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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