Publications
Detailed Information
Position-Controlled Selective Growth of ZnO nanorods on Si Substrates Using Facet-Controlled GaN Micropatterns
Cited 46 time in
Web of Science
Cited 48 time in Scopus
- Authors
- Issue Date
- 2007-12-11
- Publisher
- Wiley-Blackwell
- Citation
- Adv. Mater. 2007, 19, 4416
- Keywords
- Gallium Nitride ; Inorganic Nanostructures ; Nanorods ; Silicon ; Zinc Oxide
- Abstract
- ZnO nanorod arrays are selectively grown on 31 Substrates using facet-controlled GaN micropatterns with highly anisotropic surface energies. Although we used facet-controlled GaN micropatterns for selective MOPVE growth, other micropatterns can be employed if the difference in surface energies between a top surface and the sidewalls of a micropattern is large enough to affect heteroepitaxial selective growth of the nanorods. This growth may be expanded to create many other position-controlled semiconductor nanorods.
- ISSN
- 0935-9648
- Language
- English
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.