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Growth and characterization of Nickel Silicide and Ge on Si surfaces : a scanning tunneling microscopy study

DC Field Value Language
dc.contributor.advisor국양-
dc.contributor.author강윤호-
dc.date.accessioned2010-02-22-
dc.date.available2010-02-22-
dc.date.copyright1996.-
dc.date.issued1996-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000082556eng
dc.identifier.urihttp://hdl.handle.net/10371/55874-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :물리학과 고체물리전공,1996.en
dc.format.extentiv, 95 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject초고진공 주사 터널링 전자 현미경en
dc.subjectUHV STMen
dc.subject성장en
dc.subjectGrowthen
dc.subject실리콘en
dc.subjectSien
dc.subject니켈 실리사이드en
dc.subjectNickel Silicideen
dc.subjectMetal-Semiconductor Contacten
dc.subject게르마늄en
dc.titleGrowth and characterization of Nickel Silicide and Ge on Si surfaces : a scanning tunneling microscopy studyen
dc.typeThesis-
dc.contributor.department물리학과 고체물리전공-
dc.description.degreeDoctoren
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Theses (Ph.D. / Sc.D._물리학전공)
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