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Growth and characterization of Nickel Silicide and Ge on Si surfaces : a scanning tunneling microscopy study
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 국양 | - |
| dc.contributor.author | 강윤호 | - |
| dc.date.accessioned | 2010-02-22 | - |
| dc.date.available | 2010-02-22 | - |
| dc.date.copyright | 1996. | - |
| dc.date.issued | 1996 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000082556 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/55874 | - |
| dc.description | Thesis (doctoral)--서울대학교 대학원 :물리학과 고체물리전공,1996. | en |
| dc.format.extent | iv, 95 p. | en |
| dc.language.iso | en | en |
| dc.publisher | 서울대학교 대학원 | en |
| dc.subject | 초고진공 주사 터널링 전자 현미경 | en |
| dc.subject | UHV STM | en |
| dc.subject | 성장 | en |
| dc.subject | Growth | en |
| dc.subject | 실리콘 | en |
| dc.subject | Si | en |
| dc.subject | 니켈 실리사이드 | en |
| dc.subject | Nickel Silicide | en |
| dc.subject | Metal-Semiconductor Contact | en |
| dc.subject | 게르마늄 | en |
| dc.title | Growth and characterization of Nickel Silicide and Ge on Si surfaces : a scanning tunneling microscopy study | en |
| dc.type | Thesis | - |
| dc.contributor.department | 물리학과 고체물리전공 | - |
| dc.description.degree | Doctor | en |
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