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Growth and characterization of strained InGaAs(P)InP and its application to laser diode for optical communication
InGaAs(P)InP 변형층 성장과 분석 및 광통신용 레이저 다이오드에의 응용

DC Field Value Language
dc.contributor.advisor최병두-
dc.contributor.author유상완-
dc.date.accessioned2010-02-22-
dc.date.available2010-02-22-
dc.date.copyright1998.-
dc.date.issued1998-
dc.identifier.urihttp://library.snu.ac.kr/search/DetailView.ax?sid=1&cid=0000757049eng
dc.identifier.urihttp://hdl.handle.net/10371/55892-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :물리학과,1998.en
dc.format.extentxii, 152 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject변형층en
dc.subjectstrainen
dc.subjectInGaAs(P)/InPen
dc.subjectdiffusionen
dc.subjectMOVPEen
dc.subjectstrain relaxationen
dc.subject확산en
dc.subjectenergy band structureen
dc.subject스트레인 풀림en
dc.subjectquantum wellen
dc.titleGrowth and characterization of strained InGaAs(P)InP and its application to laser diode for optical communicationen
dc.title.alternativeInGaAs(P)InP 변형층 성장과 분석 및 광통신용 레이저 다이오드에의 응용-
dc.typeThesis-
dc.contributor.department물리학과-
dc.description.degreeDoctoren
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Theses (Ph.D. / Sc.D._물리학전공)
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