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MOCVD growth of C-doped GaAsAlGaAs and quantum wire on nonplanar substrates : 유기금속 화학기상증착법에 의한 비평탄화된 모제위에 성장된 C-doped GaAsAlGaAs 및 양자선의 특성연구

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Authors

이정석

Advisor
최병두
Issue Date
1997
Publisher
서울대학교 대학원
Keywords
MOCVD유기금속 화학기상증착법CCl₄성장속도growth rateAl 조성비Al composition비평탄화된 기판nonplanar substrate QWR양자선
Description
Thesis (doctoral)--서울대학교 대학원 :물리학과,1997.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000078094

https://hdl.handle.net/10371/55918
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