Publications
Detailed Information
Liquid phase epitaxial growth of high quality InGaP and InGaAsP and characterization of deep levels : 액상적층법을 이용한 고품위 InGaP 와 InGaAsP 성장과 깊은준위들에 대한 특성분석
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 최병두 | - |
dc.contributor.author | 권호기 | - |
dc.date.accessioned | 2010-02-22 | - |
dc.date.available | 2010-02-22 | - |
dc.date.copyright | 1997. | - |
dc.date.issued | 1997 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000078090 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/55919 | - |
dc.description | Thesis (doctoral)--서울대학교 대학원 :물리학과,1997. | en |
dc.format.extent | viii, 104 p. | en |
dc.language.iso | en | en |
dc.publisher | 서울대학교 대학원 | en |
dc.subject | 액상적층법 | en |
dc.subject | liquid phase epitaxy | en |
dc.subject | 깊은준위 과도분광법 | en |
dc.subject | deep level transient spectroscopy | en |
dc.subject | 광전도도 지속 | en |
dc.subject | persistent photoconductivity | en |
dc.subject | DX center | en |
dc.title | Liquid phase epitaxial growth of high quality InGaP and InGaAsP and characterization of deep levels | en |
dc.title.alternative | 액상적층법을 이용한 고품위 InGaP 와 InGaAsP 성장과 깊은준위들에 대한 특성분석 | - |
dc.type | Thesis | - |
dc.contributor.department | 물리학과 | - |
dc.description.degree | Doctor | en |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.