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Characteristics of minority carrier traps in In₁-xGaxAs₁-yPy grown on GaAs0.61P0.39 by liquid phase epitaxy : 액상적층법으로 GaAs0.61P0.39 기판위에 성장된 In₁-xGaxAs₁-yPy의 소수나르개 덫의 특성 연구

DC Field Value Language
dc.contributor.advisor최병두-
dc.contributor.author정태훈-
dc.date.accessioned2010-02-22-
dc.date.available2010-02-22-
dc.date.copyright1997.-
dc.date.issued1997-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000077767eng
dc.identifier.urihttps://hdl.handle.net/10371/56119-
dc.descriptionThesis (master`s)--서울대학교 대학원 :물리학과,1997.en
dc.format.extentii, 32 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.titleCharacteristics of minority carrier traps in In₁-xGaxAs₁-yPy grown on GaAs0.61P0.39 by liquid phase epitaxyen
dc.title.alternative액상적층법으로 GaAs0.61P0.39 기판위에 성장된 In₁-xGaxAs₁-yPy의 소수나르개 덫의 특성 연구-
dc.typeThesis-
dc.contributor.department물리학과-
dc.description.degreeMasteren
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