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The Analysis on the interface of narrow GaAs-Al Ga As quantum well structure by photoluminescence excitation speactroscopy
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 우종천 | - |
| dc.contributor.author | 유훈 | - |
| dc.date.accessioned | 2010-02-22 | - |
| dc.date.available | 2010-02-22 | - |
| dc.date.copyright | 1995. | - |
| dc.date.issued | 1995 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000085345 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/56192 | - |
| dc.description | Thesis (master`s)--서울대학교 대학원 :물리학과,1995. | en |
| dc.format.extent | 14 p. | en |
| dc.language.iso | en | en |
| dc.publisher | 서울대학교 대학원 | en |
| dc.title | The Analysis on the interface of narrow GaAs-Al Ga As quantum well structure by photoluminescence excitation speactroscopy | en |
| dc.type | Thesis | - |
| dc.contributor.department | 물리학과 | - |
| dc.description.degree | Master | en |
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