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Effect of processing conditions on the growth of strained Si1-xGex layers on Si
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Suh, K. Y. | - |
| dc.contributor.author | Lee, Hong H. | - |
| dc.date.accessioned | 2009-08-06T05:18:03Z | - |
| dc.date.available | 2009-08-06T05:18:03Z | - |
| dc.date.issued | 1998-08-15 | - |
| dc.identifier.citation | J. Appl. Phys. 84, 2361 (1998) | en |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/6256 | - |
| dc.description.abstract | We investigate several factors that determine the surface morphology in heteroepitaxial growth of Si1-xGex films on Si, which include composition, temperature, and pressure. Phase boundary lines are derived that define the regions for planar and island growth in terms of composition-temperature and composition-pressure. Also derived is the roughening characteristic length as a function of temperature, pressure, and characteristic time. Our results can explain the literature data satisfactorily. | en |
| dc.language.iso | en | en |
| dc.publisher | American Institute of Physics | en |
| dc.subject | SURFACE-MORPHOLOGY | en |
| dc.subject | EVOLUTION | en |
| dc.subject | EPITAXY | en |
| dc.subject | FILMS | en |
| dc.title | Effect of processing conditions on the growth of strained Si1-xGex layers on Si | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 서갑양 | - |
| dc.contributor.AlternativeAuthor | 이홍희 | - |
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