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Effect of processing conditions on the growth of strained Si1-xGex layers on Si

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dc.contributor.authorSuh, K. Y.-
dc.contributor.authorLee, Hong H.-
dc.date.accessioned2009-08-06T05:18:03Z-
dc.date.available2009-08-06T05:18:03Z-
dc.date.issued1998-08-15-
dc.identifier.citationJ. Appl. Phys. 84, 2361 (1998)en
dc.identifier.issn0021-8979-
dc.identifier.urihttps://hdl.handle.net/10371/6256-
dc.description.abstractWe investigate several factors that determine the surface morphology in heteroepitaxial growth of Si1-xGex films on Si, which include composition, temperature, and pressure. Phase boundary lines are derived that define the regions for planar and island growth in terms of composition-temperature and composition-pressure. Also derived is the roughening characteristic length as a function of temperature, pressure, and characteristic time. Our results can explain the literature data satisfactorily.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.subjectSURFACE-MORPHOLOGYen
dc.subjectEVOLUTIONen
dc.subjectEPITAXYen
dc.subjectFILMSen
dc.titleEffect of processing conditions on the growth of strained Si1-xGex layers on Sien
dc.typeArticleen
dc.contributor.AlternativeAuthor서갑양-
dc.contributor.AlternativeAuthor이홍희-
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Mechanical Aerospace Engineering (기계항공공학부)Journal Papers (저널논문_기계항공공학부)
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