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Ge composition in Si1-xGex films grown from SiH2Cl2/GeH4 precursors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Suh, K. Y. | - |
| dc.contributor.author | Lee, Hong H. | - |
| dc.date.accessioned | 2009-08-06T05:38:23Z | - |
| dc.date.available | 2009-08-06T05:38:23Z | - |
| dc.date.issued | 2000-10-01 | - |
| dc.identifier.citation | J. Appl. Phys. 88, 4044 (2000) | en |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/6265 | - |
| dc.description.abstract | A simple model for the Ge composition in Si1-xGex films grown from SiH2Cl2/GeH4 precursors is developed on the basis of adsorption and desorption kinetics for the intermediate temperature range (600 degrees C < T < 900 degrees C). For this system, the solid phase composition of Ge, x, is related to the gas phase composition ratio of the two source gases, G, by x(2)/(1-x) = constantxG, which contrasts with the conventional relationship, x/(1-x) = constantxG, that is known for SiH4/GeH4 chemical vapor deposition. The proportionality constant depends not only on temperature but also on pressure. The model compares well with the experimental data in the literature. | en |
| dc.language.iso | en | en |
| dc.publisher | American Institute of Physics | en |
| dc.subject | CHEMICAL-VAPOR-DEPOSITION | en |
| dc.subject | SILICON-GERMANIUM | en |
| dc.subject | EPITAXIAL-GROWTH | en |
| dc.subject | ATMOSPHERIC-PRESSURE | en |
| dc.subject | GAS-PHASE | en |
| dc.subject | KINETICS | en |
| dc.subject | SI | en |
| dc.title | Ge composition in Si1-xGex films grown from SiH2Cl2/GeH4 precursors | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 서갑양 | - |
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