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Aging behavior of porous silicon electrochemically etched with the aid of Zn
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Suh, K. Y. | - |
| dc.contributor.author | Kim, Y. S. | - |
| dc.contributor.author | Lee, Hong H. | - |
| dc.date.accessioned | 2009-08-06T05:51:19Z | - |
| dc.date.available | 2009-08-06T05:51:19Z | - |
| dc.date.issued | 2001-11-01 | - |
| dc.identifier.citation | J. Appl. Phys. 90, 4485 (2001) | en |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/6267 | - |
| dc.description.abstract | Aging behavior of red, green, and blue photoluminescence from porous silicon formed by electrochemical etching aided with zinc has been studied over a 3 month time span. Time-resolved photoluminescence spectra and decay dynamics have revealed that there are two radiating states in Zn-aided porous silicon. One is the quantum confinement and the other is the oxygen-related defect. For green emission, the wavelength shifts from 520 to 420 nm and its photoluminescence spectra and decay behavior become very similar to those of blue emission. | en |
| dc.language.iso | en | en |
| dc.publisher | American Institute of Physics | en |
| dc.relation.ispartofseries | 4485-4488 | en |
| dc.subject | PHOTOLUMINESCENCE | en |
| dc.subject | ORIGIN | en |
| dc.subject | BLUE | en |
| dc.title | Aging behavior of porous silicon electrochemically etched with the aid of Zn | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 서갑양 | - |
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