Improvement of SiO₂4H-SiC interface quality in 4H-SiC metal-oxide-semiconductor capacitors

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Improvement of SiO₂4H-SiC interface quality in 4H-SiC metal-oxide-semiconductor capacitors

DC Field	Value	Language
dc.contributor.advisor	김형준	-
dc.contributor.author	문정현	-
dc.date.accessioned	2010-05-04T04:46:28Z	-
dc.date.available	2010-05-04T04:46:28Z	-
dc.date.copyright	2010	-
dc.date.issued	2010	-
dc.identifier.uri	http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000032459	eng
dc.identifier.uri	https://hdl.handle.net/10371/63872	-
dc.description	Thesis(doctors) --서울대학교 대학원 :재료공학부,2010.2.	en
dc.format.extent	xvii, 145 leaves	en
dc.language.iso	en	en
dc.publisher	서울대학교 대학원	en
dc.subject	4H-탄화규소	en
dc.subject	4H-SiC	en
dc.subject	채널이동도	en
dc.subject	channel mobility	en
dc.subject	계면결함준위	en
dc.subject	Interface trap density (Dit)	en
dc.subject	질화처리	en
dc.subject	Nitridation	en
dc.subject	적층형 게이트 산화막	en
dc.subject	stacking gate dielectric	en
dc.subject	반응방지막	en
dc.subject	reaction barrier layer	en
dc.title	Improvement of SiO₂4H-SiC interface quality in 4H-SiC metal-oxide-semiconductor capacitors	en
dc.type	Thesis	-
dc.contributor.department	재료공학부	-
dc.description.degree	Doctor	en

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