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(The) study of SiO₂,Si₃N₄passivation layers for InSb photodiodes : 인듐안티모나이드 적외선 감지소자용 SiO₂,Si₃N₄절연막에 대한 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 윤의준 | - |
| dc.contributor.author | 이재열 | - |
| dc.date.accessioned | 2010-05-10T03:42:43Z | - |
| dc.date.available | 2010-05-10T03:42:43Z | - |
| dc.date.copyright | 2010 | - |
| dc.date.issued | 2010 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000033307 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/64790 | - |
| dc.description | Thesis(masters) --서울대학교 대학원 :재료공학부,2010.2. | en |
| dc.format.extent | v, 36 leaves | en |
| dc.language.iso | en | en |
| dc.publisher | 서울대학교 대학원 | en |
| dc.subject | 인듐 안티모나이드 | en |
| dc.subject | InSb | en |
| dc.subject | 적외선 | en |
| dc.subject | photodiode | en |
| dc.subject | 절연막 | en |
| dc.subject | sensor | en |
| dc.title | (The) study of SiO₂,Si₃N₄passivation layers for InSb photodiodes | en |
| dc.title.alternative | 인듐안티모나이드 적외선 감지소자용 SiO₂,Si₃N₄절연막에 대한 연구 | en |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Master | en |
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