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Growth of GaN epi-layer using AIN and GaN buffer layer on patterned sapphire substrate by metalorganic chemical vapor deposition (MOCVD) : 패턴 된 사파이어 기판 위에 AlN 중간층을 이용한 GaN 에피 박막 MOCVD 성장
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 윤의준 | - |
| dc.contributor.author | 김남혁 | - |
| dc.date.accessioned | 2010-05-10T03:43:29Z | - |
| dc.date.available | 2010-05-10T03:43:29Z | - |
| dc.date.copyright | 2010 | - |
| dc.date.issued | 2010 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000033291 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/64804 | - |
| dc.description | Thesis(masters) --서울대학교 대학원 :재료공학부,2010.2. | en |
| dc.format.extent | vii, 45 leaves | en |
| dc.language.iso | en | en |
| dc.publisher | 서울대학교 대학원 | en |
| dc.subject | 유기금속화학기상증착법 | en |
| dc.subject | Metalorganic chemical vapor deposition (MOCVD) | en |
| dc.subject | AlN 중간층 | en |
| dc.subject | AlN buffer layer | en |
| dc.subject | 패턴 된 사파이어 기판 | en |
| dc.subject | Patterned sapphire substrates (PSSs) | en |
| dc.subject | 측면 성장 | en |
| dc.subject | Epitaxial lateral overgrowth (ELO) | en |
| dc.subject | 응력 완화 | en |
| dc.subject | Stress relaxation | en |
| dc.title | Growth of GaN epi-layer using AIN and GaN buffer layer on patterned sapphire substrate by metalorganic chemical vapor deposition (MOCVD) | en |
| dc.title.alternative | 패턴 된 사파이어 기판 위에 AlN 중간층을 이용한 GaN 에피 박막 MOCVD 성장 | en |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Master | en |
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