Recessed Ohmic & Gate Process of AlGaNGaN HEMTs

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Recessed Ohmic & Gate Process of AlGaNGaN HEMTs : Recessed Ohmic & Gate 공정을 통한 AlGaNGaN HEMTs 에 관한 연구

DC Field	Value	Language
dc.contributor.advisor	서광석	-
dc.contributor.author	성정민	-
dc.date.accessioned	2010-05-10T09:57:55Z	-
dc.date.available	2010-05-10T09:57:55Z	-
dc.date.copyright	2010	-
dc.date.issued	2010	-
dc.identifier.uri	http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000033408	eng
dc.identifier.uri	https://hdl.handle.net/10371/65232	-
dc.description	Thesis(masters) --서울대학교 대학원 :전기. 컴퓨터공학부,2010.2.	en
dc.format.extent	iv, 40 leaves	en
dc.language.iso	en	en
dc.publisher	서울대학교 대학원	en
dc.subject	GaN	en
dc.subject	GaN	en
dc.subject	AlGaN	en
dc.subject	AlGaN	en
dc.subject	리세스	en
dc.subject	recess	en
dc.subject	오믹	en
dc.subject	ohmic	en
dc.subject	게이트	en
dc.subject	gate	en
dc.subject	BCl3	en
dc.subject	BCl3	en
dc.subject	Cl2	en
dc.subject	Cl2	en
dc.subject	ICP	en
dc.subject	ICP	en
dc.subject	HEMT	en
dc.subject	pulsed I-V	en
dc.subject	HEMT	en
dc.title	Recessed Ohmic & Gate Process of AlGaNGaN HEMTs	en
dc.title.alternative	Recessed Ohmic & Gate 공정을 통한 AlGaNGaN HEMTs 에 관한 연구	en
dc.type	Thesis	-
dc.contributor.department	전기. 컴퓨터공학부	-
dc.description.degree	Master	en

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