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Properties of Ga1-xMnxAs regrown on InGaP (001) surfaces and realization of freestanding micromechanical structures : InGap(001) 표면에 재성장된 Ga1-xMnxAs의 특성과 freestanding micromechanical 구조의 구현

DC Field Value Language
dc.contributor.advisor박윤-
dc.contributor.author이준수-
dc.date.accessioned2010-05-14T07:40:13Z-
dc.date.available2010-05-14T07:40:13Z-
dc.date.copyright2007.-
dc.date.issued2007-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000045621eng
dc.identifier.urihttps://hdl.handle.net/10371/66247-
dc.descriptionThesis(master`s)--서울대학교 대학원 :물리·천문학부,2007.en
dc.format.extent37 leavesen
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject저온 분자선 켜쌓기en
dc.subjectlow-temperature molecular beam epitaxyen
dc.subjectGaMnAsen
dc.subjectGaMnAsen
dc.subjectInGaPen
dc.subjectInGaPen
dc.subject역학적 freestanding 구조물en
dc.subjectfreestanding micromechanical structureen
dc.titleProperties of Ga1-xMnxAs regrown on InGaP (001) surfaces and realization of freestanding micromechanical structuresen
dc.title.alternativeInGap(001) 표면에 재성장된 Ga1-xMnxAs의 특성과 freestanding micromechanical 구조의 구현en
dc.typeThesis-
dc.contributor.department물리·천문학부-
dc.description.degreeMasteren
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