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Rubidium-Carbonate-Doped 4,7-Diphenyl-1,10-phenanthroline Electron Transporting Layer for High-Efficiency p-i-n Organic Light Emitting Diodes
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Leem, Dong-Seok | - |
| dc.contributor.author | Kim, Sei-Yong | - |
| dc.contributor.author | Kim, Jang-Joo | - |
| dc.contributor.author | Chen, Mei-Hsin | - |
| dc.contributor.author | Wu, Chih-I | - |
| dc.date.accessioned | 2009-08-11T05:56:49Z | - |
| dc.date.available | 2009-08-11T05:56:49Z | - |
| dc.date.issued | 2009-01 | - |
| dc.identifier.citation | Electrochem. Solid-State Lett., 12, J8 (2009) | en |
| dc.identifier.issn | 1099-0062 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/6946 | - |
| dc.description.abstract | We investigated the electrical properties and charge transport mechanisms of a rubidium-carbonate (Rb2CO3)-doped 4,7-diphenyl-1,10-phenanthroline (Bphen) electron transporting layer (ETL). The electron-only devices and photoemission spectroscopy analysis revealed that the formation of doping-induced gap states dominantly contributes to the improvement of carrier transport characteristics of the doped system. High-efficiency green phosphorescent p-doping/intrinsic/n-doping (p-i-n) organic light emitting diodes were demonstrated using the Rb2CO3-doped Bphen ETL and rhenium oxide (ReO3)-doped N,N-diphenyl-N,N-bis(1,1-biphenyl)-4,4-diamine hole transporting layer, exhibiting an external quantum efficiency of 19.2%, power efficiency of 76 lm/W, and low operation voltage of 3.6 V at 1000 cd/m2. | en |
| dc.description.sponsorship | The authors thank the MKE of Korea and Samsung SDI for their
financial support of this work. | en |
| dc.language.iso | en | en |
| dc.publisher | Electrochemical Society | en |
| dc.subject | organic light emitting diodes | en |
| dc.subject | organic semiconductors | en |
| dc.subject | photoelectron spectra | en |
| dc.subject | p-i-n diodes | en |
| dc.title | Rubidium-Carbonate-Doped 4,7-Diphenyl-1,10-phenanthroline Electron Transporting Layer for High-Efficiency p-i-n Organic Light Emitting Diodes | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 임동석 | - |
| dc.contributor.AlternativeAuthor | 김세용 | - |
| dc.contributor.AlternativeAuthor | 김장주 | - |
| dc.identifier.doi | 10.1149/1.3007239 | - |
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