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Air stable C60 based n-type organic field effect transistor using a perfluoropolymer insulator

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dc.contributor.authorJang, Junhyuk-
dc.contributor.authorKim, Ji Whan-
dc.contributor.authorPark, Nohhwal-
dc.contributor.authorKim, Jang-Joo-
dc.date.accessioned2009-08-12T03:54:03Z-
dc.date.available2009-08-12T03:54:03Z-
dc.date.issued2008-02-29-
dc.identifier.citationOrganic Electronics 9 (481) (2008)en
dc.identifier.issn1566-1199-
dc.identifier.urihttps://hdl.handle.net/10371/7002-
dc.description.abstractAir stable n-type organic field effect transistors (OFETs) based on C60 are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of 0.049 cm2/V s in ambient air. Replacing the gate dielectric material by SiO2 resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in air.en
dc.description.sponsorshipThis research was supported by a Grant
(F0004071-2007-23) from the Information Display
R&D Center, one of the 21st Century Frontier
R&D Program funded by the Ministry of Commerce, Industry and Energy of the Korean
Government.
en
dc.language.isoen-
dc.publisherElsevieren
dc.subjectOrganic field effect transistoren
dc.subjectn-Typeen
dc.subjectC60en
dc.subjectAir stableen
dc.subjectPerfluorinated polymer gate insulatoren
dc.titleAir stable C60 based n-type organic field effect transistor using a perfluoropolymer insulatoren
dc.typeArticleen
dc.contributor.AlternativeAuthor장준혁-
dc.contributor.AlternativeAuthor김지환-
dc.contributor.AlternativeAuthor박노활-
dc.contributor.AlternativeAuthor김장주-
dc.identifier.doi10.1016/j.orgel.2008.02.011-
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Journal Papers (저널논문_재료공학부)
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