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Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics

Cited 12 time in Web of Science Cited 13 time in Scopus
Authors
Ryoo, Kyung-Chang; Oh, Jeong-Hoon; Jeong, Hongsik; Jung, Sunghun; Park, Byung-Gook
Issue Date
2011-04-01
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS; Vol.50 4; -
Abstract
We firstly propose a novel U-shape resistive cell structure which is the best fit for generating low power resistive random access memory (RRAM) with forming-less process. We find that irregular resistive switching behavior in the initial transition and the characteristics associated with it. Controlling the conducting filament (CF) dimension and deposition orientation of resistive material are expected to reduce the distribution and forming voltage, which enables low power RRAM to be feasible without forming state. Simple fabrication flow and device performances are also evaluated in the aspect of forming-less process. Numerical simulation is performed using random circuit breaker model (RCB) to confirm the proposed structure. (C) 2011 The Japan Society of Applied Physics
ISSN
0021-4922
Language
English
URI
https://hdl.handle.net/10371/75073
DOI
https://doi.org/10.1143/JJAP.50.04DD15
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Architecture and Architectural Engineering (건축학과)Journal Papers (저널논문_건축학과)
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