S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Electrical and Computer Engineering (전기·정보공학부) Journal Papers (저널논문_전기·정보공학부)
IFVD방식의 다중양자우물구조의 서로섞임에서 발생되는 스트레인에 의한 도파로형 광다이오드의 편광의존성
Polarization dependency of waveguide photodiode by strain induced from IFVD multi-quantum-well intermixing
- 윤경훈; 박현상; 여덕호; 김성준
- Issue Date
- 제6회 광전자공학학술회의, 1999년 5월, ThB1, p105, 광주과학기술원
- Polarization dependency of waveguide photodiode was investigated to see the effect of IFVD on strain of quantum-well. It was expected that during IFVD group V elements interdiffuse dominantly causing tensile strain in the well region and compressive in the barrier. Photocurrent measurement show that absorption edge of TE mode(by heavy hole) moves larger than that of TM mode(by light hole( resulted from tensile strain in well by IFVD. This can be used to make polarization independent photonic integrated circuits.