다중 양자 우물 구조의 상호 섞임 현상을 이용한 광도파로의 제작

Abstract

We have fabricated optical waveguide using intermixing of InGaAs/InGaAsP multi-quantum well (MQW) structure. As-grown epi layer had very large absorption coefficient at the wavelength of 1.55㎛, however, after intermixing of the MQW the propagation loss has greatly reduced. Intermixing was done by heat treatment after deposition of SiO2 dielectric material on the sample and the optical waveguide was made by reactive ion etching using CH4/H2 mixture. For the waveguide after 800℃, 30sec heat treatment, the measured propagation loss was 3.76dB/cm and 3.95dB/cm for TE and TM mode respectively.